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| UNISONIC TECHNOLOGIES CO., LTD 3N70 3 AMPS, 700 VOLTS N-CHANNEL POWER MOSFET DESCRIPTION The UTC 3N70 is a high voltage and high current power MOSFET , designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in power supplies, PWM motor controls, high efficient DC to DC converters and bridge circuits. Power MOSFET FEATURES * RDS(ON) 4.0 @VGS = 10 V * Ultra low gate charge ( typical 10 nC ) * Low reverse transfer capacitance * Fast switching capability * Avalanche energy specified * Improved dv/dt capability, high ruggedness SYMBOL 2.Drain 1.Gate 3.Source ORDERING INFORMATION Ordering Number Lead Free Halogen Free 3N70L-TM3-T 3N70G-TM3-T 3N70L-TN3-R 3N70G-TN3-R Package TO-251 TO-252 Pin Assignment 1 2 3 G D S G D S Packing Tube Tape Reel www.unisonic.com.tw Copyright (c) 2010 Unisonic Technologies Co., Ltd 1 of 7 QW-R502-282,D 3N70 ABSOLUTE MAXIMUM RATINGS (TC = 25, unless otherwise specified) Power MOSFET PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS 700 V Gate-Source Voltage VGSS 30 V Avalanche Current (Note 2) IAR 3.0 A Continuous Drain Current ID 3.0 A Pulsed Drain Current (Note 2) IDM 12 A Single Pulsed (Note 3) EAS 200 mJ Avalanche Energy Repetitive (Note 2) EAR 7.5 mJ Peak Diode Recovery dv/dt (Note 4) dv/dt 4.5 V/ns Power Dissipation PD 50 W Junction Temperature TJ +150 Operating Temperature TOPR -55 ~ +150 Storage Temperature TSTG -55 ~ +150 Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Repetitive Rating: Pulse width limited by maximum junction temperature 3. L = 64mH, IAS = 2.4A, VDD = 50V, RG = 25 , Starting TJ = 25C 4. ISD3.0A, di/dt200A/s, VDDBVDSS, Starting TJ = 25C THERMAL DATA PARAMETER Junction to Ambient Junction to Case SYMBOL JA JC RATING 110 2.5 UNIT C/W C/W ELECTRICAL CHARACTERISTICS (TC =25, unless otherwise specified) PARAMETER OFF CHARACTERISTICS Drain-Source Breakdown Voltage Drain-Source Leakage Current Gate-Source Leakage Current Forward Reverse SYMBOL BVDSS IDSS IGSS TEST CONDITIONS VGS = 0 V, ID = 250A VDS = 700 V, VGS = 0 V VGS = 30 V, VDS = 0 V VGS = -30 V, VDS = 0 V 0.6 2.0 2.8 350 50 5.5 10 30 20 30 10 2.7 4.9 4.0 4.0 450 65 32 40 70 100 70 13 MIN TYP MAX UNIT 700 10 100 -100 V A nA nA V/ V pF pF pF ns ns ns ns nC nC nC Breakdown Voltage Temperature Coefficient ON CHARACTERISTICS Gate Threshold Voltage Static Drain-Source On-State Resistance DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Reverse Transfer Capacitance SWITCHING CHARACTERISTICS Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge BVDSS/TJ ID = 250A, Referenced to 25C VGS(TH) RDS(ON) CISS COSS CRSS tD(ON) tR tD(OFF) tF QG QGS QDD VDS = VGS, ID = 250 A VGS = 10 V, ID = 1.5A VDS = 25 V, VGS = 0 V, f = 1MHz VDD = 30V, ID = 1.0 A, RG = 25 (Note 1, 2) VDS= 480V,ID= 3.0A, VGS= 10 V (Note 1, 2) UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 2 of 7 QW-R502-282,D 3N70 ELECTRICAL CHARACTERISTICS(Cont.) SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Drain-Source Diode Forward Voltage VSD VGS = 0 V, IS = 3.0 A Maximum Continuous Drain-Source Diode IS Forward Current Maximum Pulsed Drain-Source Diode ISM Forward Current VGS = 0 V, IS = 3.0 A, Reverse Recovery Time tRR dIF/dt = 100 A/s (Note 1) Reverse Recovery Charge QRR Notes: 1. Pulse Test: Pulse width300s, Duty cycle2% 2. Essentially independent of operating temperature Power MOSFET 1.4 3.0 12 210 1.2 V A A ns C UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 3 of 7 QW-R502-282,D 3N70 TEST CIRCUITS AND WAVEFORMS Power MOSFET D.U.T. + VDS - + L RG Driver VGS Same Type as D.U.T. * dv/dt controlled by RG * ISD controlled by pulse period * D.U.T.-Device Under Test VDD 1A Peak Diode Recovery dv/dt Test Circuit VGS (Driver) Period P.W. D= P. W. Period VGS= 10V IFM, Body Diode Forward Current ISD (D.U.T.) IRM Body Diode Reverse Current di/dt Body Diode Recovery dv/dt VDS (D.U.T.) VDD Body Diode Forward Voltage Drop 1B Peak Diode Recovery dv/dt Waveforms UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 4 of 7 QW-R502-282,D 3N70 TEST CIRCUITS AND WAVEFORMS (Cont.) RL VDD VDS VGS RG 10% tD(ON) tR Power MOSFET VDS 90% 10V Pulse Width1s Duty Factor0.1% D.U.T. VGS tD(OFF) tF 2A Switching Test Circuit 2B Switching Waveforms 12V 50k 0.2F 0.3F Same Type as D.U.T. 10V QGS QG VDS VGS DUT 3mA QGD VGS Charge 3A Gate Charge Test Circuit 3B Gate Charge Waveform 4A Unclamped Inductive Switching Test Circuit 4B Unclamped Inductive Switching Waveforms UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 5 of 7 QW-R502-282,D 3N70 TYPICAL CHARACTERISTICS Drain Current vs. Source to Drain Voltage 4 3.0 2.5 3 2.0 2 1.5 1.0 1 0.5 0 0 Power MOSFET Drain-Source On-State Resistance Characteristics VGS=10V, ID=1.5A 0 0.8 0.4 0.6 0.2 Source to Drain Voltage, VSD (V) 1.0 0 2 4 6 Drain to Source Voltage, VDS (V) 8 Drain Current, ID (A) 3.0 2.5 2.0 1.5 1.0 0.5 0 25 Maximum Drain Current vs. Case Temperature 50 75 100 125 Case Temperature, TC (C) 150 UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw Drain Current, ID (A) 6 of 7 QW-R502-282,D 3N70 Power MOSFET UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 7 of 7 QW-R502-282,D |
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